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w .D features General w w Type VDSS STB9NK90Z STW9NK90Z STP9NK90Z STF9NK90Z s s s at Sh a N-CHANNEL 900V - 1.1 - 8A - TO-220/FP-DPAK-TO-247 Zener-Protected SuperMESHTM MOSFET Package RDS(on) <1.3 <1.3 <1.3 <1.3 ID 8 8 8 8 A A A A Pw 160 W 160 W 160 W 40 W et e 4U . om c STB9NK90Z - STF9NK90Z STP9NK90Z - STW9NK90Z 900 900 900 900 V V V V 3 1 2 TO-220 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Applications s s s HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE Order codes Sales Type STB9NK90Z STF9NK90Z STP9NK90Z STW9NK90Z w w w .D t a S a e h Internal schematic diagram t e TO-247 U 4 3 2 1 .c m o 1 3 DPAK 3 TO-220FP 1 2 Marking B9NK90Z F9NK90Z P9NK90Z W9NK90Z Package DPAK TO-220FP TO-220 TO-247 Packaging TAPE & REEL TUBE TUBE TUBE September 2005 w w w .D at Sh a et e 4U . om c Rev 2 1/15 www.st.com 15 1 Electrical ratings STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Value TO-220/DPAK/ TO-247 VDS VDGR VGS ID ID Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20k) Gate-Source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor 8 5 32 160 1.28 4 4.5 --55 to 150 2500 900 900 30 8 (Note 1) 5 (Note 1) 32 (Note 1) 40 0.32 TO-220FP V V V A A A W W/C KV V/ns V C Unit Symbol IDM Note 2 PTOT Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5k) dv/dt Note 3 Peak Diode Recovery voltage slope VISO Tj Tstg Insulation Withstand Volatge (DC) Operating Junction Temperature Storage Temperature Table 2. Thermal data TO-220/ DPAK TO-220FP 3.1 62.5 300 TO-247 0.78 50 Unit C/W C/W C Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-amb Max Maximum Lead Temperature For Soldering Purpose 0.78 Table 3. Symbol IAR EAS Avalanche characteristics Parameter Avalanche Current, repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj=25C, ID=IAR, VDD = 50V) Max Value 8 300 Unit A mJ 2/15 STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z 2 Electrical characteristics 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS On/off states Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate Body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-Source On Resistance Test Conditions ID = 1 mA, VGS= 0 VDS = Max Rating, VDS = Max Rating,Tc=125C VGS = 20 V, VDS = 0 VDS= VGS, ID = 100 A VGS= 10 V, ID= 3.6 A 3 3.75 1.1 Min. 900 1 50 10 Typ. Max. Unit V A IGSS VGS(th) RDS(on) A V 4.5 1.3 Table 5. Symbol gfs Note 4 Ciss Coss Crss Coss eq. Note 5 Qg Qgs Qgd Dynamic Parameter Forward Transconductance Test Conditions VDS =15V, ID = 3.6 A Min. Typ. 5.75 2115 190 40 115 72 14 38 100 Max. Unit S pF pF pF pF nC nC nC Input Capacitance VDS =25V, f=1 MHz, V GS=0 Output Capacitance Reverse Transfer Capacitance Equivalent Ouput Capacitance VGS=0, VDS =0V to 720V Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=720V, ID = 8A VGS =10V (see Figure 19) Table 6. Symbol td(on) tr td(off) tf tr(Voff) tf tc Switching times Parameter Turn-on Delay Time Rise Time Test Conditions VDD=450 V, ID=4A, RG=4.7, VGS=10V (see Figure 20) VDD=450 V, ID=4A, RG=4.7, VGS=10V (see Figure 20) VDD=720 V, ID=8A, RG=4.7, VGS=10V (see Figure 20) Min. Typ. 22 13 Max. Unit ns ns Turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time 55 28 53 11 22 ns ns ns ns ns 3/15 2 Electrical characteristics STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z Table 7. Symbol BVGSO Note 6 Gate-source zener diode Parameter Gate-Source Breakdown Voltage Test Conditions Igs=1mA (Open Drain) Min. 30 Typ. Max. Unit V Table 8. Symbol ISD ISDMNote 2 VSDNote 4 trr Qrr IRRM Source drain diode Parameter Source-drain Current Source-drain Current (pulsed) Forward on Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=8 A, VGS=0 ISD=8A, di/dt = 100A/s, VDD=50 V, Tj=150C 950 10 21 Test Conditions Min. Typ. Max. 8 32 1.6 Unit A A V ns C A (1)Limited only by maximum temperature allowed (2) Pulse width limited by safe operating area (3) ISD 10A, di/dt 200A/s, VDD V(BR)DSS , Tj TJMAX (4) Pulsed: pulse duration = 300s, duty cycle 1.5% (5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% (6) The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 4/15 STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z 2 Electrical characteristics 2.1 Electrical characteristics (curves) Safe Operating Area for TO-220/DPAK Figure 2. Thermal Impedanc for TO-220/DPAK Figure 1. Figure 3. Safe Operating Area for TO-220FP Figure 4. Thermal Impedance for TO-220FP Figure 5. Safe Operating Area for TO-247 Figure 6. Thermal Impedance for TO-247 5/15 2 Electrical characteristics STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z Figure 8. Transfer Characteristics Figure 7. Output Characteristics Figure 9. Transconductance Figure 10. Static Drain-Source on Resistance Figure 11. Gate Charge vs Gate -Source Voltage Figure 12. Capacitance Variations 6/15 STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z 2 Electrical characteristics Figure 13. Normalized Gate Threshold Voltage Figure 14. Normalized on Resistance vs vs Temperatute Temperature Figure 15. Source-drain Diode Forward Characteristics Figure 16. Normalized BVDSS vs Temperature Figure 17. Maximum Avalanche Energy vs Temperature 7/15 3 Test circuits STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z 3 Test circuits Figure 19. Gate Charge Test Circuit Figure 18. Switching Times Test Circuit For Resistive Load Figure 20. Test Circuit For Inductive Load Switching and Diode Recovery Times 8/15 STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z 4 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/15 4 Package mechanical data STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 10/15 STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z 4 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA TO-220FP MECHANICAL DATA DIM. DIM. AA B A1 D A2 E F B2 F1 F2 C G C2 G1 H D B mm. mm. TYP TYP inch inch TYP. TYP. MIN. MIN. 4.4 4.4 2.49 2.5 2.5 0.03 0.45 0.7 0.75 1.14 1.15 0.45 1.15 4.95 1.23 2.4 8.95 10 MAX. MAX. 4.6 4.6 2.69 2.7 2.75 0.23 0.7 0.93 1 1.7 1.7 0.6 1.7 5.2 1.36 2.7 9.35 10.4 10.4 30.6 MIN. MIN. 0.173 0.173 0.098 0.098 0.098 0.001 0.017 0.027 0.030 0.044 0.045 0.017 0.045 0.195 0.048 0.094 0.352 0.393 0.393 1.126 .0385 0.114 0.192 0.626 0.590 0.354 0.050 0.118 0.055 0.094 MAX. MAX. 0.181 0.181 0.106 0.106 0.108 0.009 0.027 0.036 0.039 0.067 0.067 0.023 0.067 0.204 0.053 0.106 0.368 0.409 1.204 D1 L2 L3 E L4E1 L5 G L6 L L7 L2 O L3 M R V2 16 10 28.6 9.8 2.9 4.88 15.9 15 9 1.27 3 1.4 2.4 8 0.315 0.630 0.334 8.5 10.6 3.6 5.28 16.4 15.85 9.3 1.4 3.2 1.75 3.2 0.417 0.141 0.208 0.645 0.625 0.366 0.055 0.126 0.068 0.126 0.4 0 4 0.015 A B L3 L6 L7 F1 F D G1 H F2 L2 3 E L5 123 L4 G 1 11/15 4 Package mechanical data STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 12/15 STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z 5 Packing mechanical data 5 Packing mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 13/15 6 Revision History STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z 6 Revision History Date 05-Sep-2005 Revision 2 Changes Inserted new package (DPAK) 14/15 STB9NK90Z - STF9NK90Z - STP9NK90Z - STW9NK90Z 6 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 15/15 |
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